Abstract
Resistivity striations in a strongly inverted FZ grown n-type silicon wafer are non-destructively detected by photovoltage imaging, in which a 2 kHz AC surface photovoltage, induced by the irradiation of a chopped blue (peaking at 448 nm) photon beam with 30 mu W, is mapped as a 512*480 pixel black and white image. The image contrast is due to the interface trap distribution associated with inhomogeneous dopant concentration.
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